High-Performance, Metamorphic InxGa1-xAs Tunnel Diodes Grown by Molecular Beam Epitaxy

IEEE Electron Device Letters

Volumn 24, Issue 10, 2003, Pages 613-615

  Kwon, O ^a   Jazwiecki, M M ^a   Sacks, R N ^b   Ringel, S A ^b  

^a The Ohio State University   (United States)

^b Picometrix Inc   (United States)

Author keywords

InAlAs; InGaAs; Lattice mismatch; Metamorphic; Molecular beam epitaxy; Thermophotovoltaic; Tunnel diode

Indexed keywords

CURRENT DENSITY; ELECTRIC POTENTIAL; ENERGY GAP; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; TUNNEL JUNCTIONS;

THERMOPHOTOVOLTAICS;

TUNNEL DIODES;

EID: 0141883951     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.817380     Document Type: Article

References (11)

1. O. Boric-Lubecke, D. Pan, and T. Tatsuo, "Fundamental and subharmonic excitation for an oscillator with several tunneling diodes in series," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 969-976, Apr. 1995.
2. T. Takamoto, E. Ikeda, and H. Kurita, "Over 30% efficiency InGaP/GaAs tandem solar cell," Appl. Phys. Lett., vol. 70,' no. 3, pp. 381-383, 1997.
3. M. Arzberger, M. Lohner, G. Bohm, and M. C. Amann, "Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction, " Electron. Lett., vol. 36, no. 1, pp. 87-88, 2000.
4. 0.47As thermophotovoltaic devices grown by solid source molecular beam epitaxy," IEEE Electron Device Lett., vol. 23, pp. 697-699, Dec. 2002.
5. N. S. Fatemi, D. M. Wilt, R. W. Hoffman, M. A. Stan, V. G. Weizer, P. P. Jenkins, O. S. Khan, C. S. Murray, D. Scheiman, and D. Brinker, "High-performance, lattice-mismatched InGaAs/InP monolithic inter-connected modules (MIM)," in Proc. Thermophotovoltaic Generation of Electricity, 4th NREL Conf., 1998, pp. 121-131.
6. D. M. Wilt, C. S. Murray, N. S. Fatemi, and V. Weizer, "n/p/n tunnel junction InGaAs monolithic interconnect module (MIM)," in Proc. Thermophotovoltaic Generation of Electricity, 4th NREL Conf., 1998, pp. 152-160.
7. T. J. Coutts, "A review of progress in thermophotovoltaic generation of electricity," Renewable Sustainable Energy Rev., no. 3, pp. 77-184, 1999.
8. D. I. Lubyshev, M. Micovic, W. Z. Cai, and D. L. Miller, "Molar fraction and substrate orientation effects on carbon doping in InGaAs grown by solid source molecular beam epitaxy using carbon tetrabromide," J. Appl. Phys., vol. 84, no. 8, pp. 4281-4284, 1998.
9. E. O. Kane, "Theory of tunneling," J. Appl. Phys, vol. 32, no. 1, pp. 83-91, 1961.
10. T. A. Demassa and D. P. Knott, "The prediction of tunnel diode voltage-current characteristics," Solid State Electron., vol. 13, pp. 131-138, 1970.
11. 0.53 As by low-temperature molecular beam epitaxy," Appl. Phys. Lett., vol. 54, no. 25, pp. 2586-2588, 1989.