Simulation of nanoscale InAlAs/InGaAs high electron mobility transistors based on drift-diffusion model incorporating an effective potential

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 7 A, 2003, Pages 4261-4263

  Sano, Eiichi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Drift diffusion model; HEMT; Heterojunction; Quantum effect; Short channel effect

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; HETEROJUNCTIONS; POISSON EQUATION; QUANTUM THEORY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; THRESHOLD VOLTAGE;

DRIFT-DIFFUSION-BASED SIMULATION; EFFECTIVE POTENTIAL METHOD; SHORT-CHANNEL EFFECT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0141829710     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.4261     Document Type: Article

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