Ab initio and finite-temperature molecular dynamics studies of lattice resistance in tantalum

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 1, 2003, Pages

  Segall, E ^a,e   Strachan, Alejandro ^b,f   Goddard, William ^b   Ismail Beigi, Sohrab ^c   Arias, A ^d  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d Laboratory of Atomic and Solid State Physics and Sibley School of Mechanical and Aerospace Engineering   (United States)

^e California Institute of Technology   (United States)

^f LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TANTALUM;

AB INITIO CALCULATION; ARTICLE; CALCULATION; ELECTRIC POTENTIAL; LOW TEMPERATURE; MOLECULAR DYNAMICS; TEMPERATURE DEPENDENCE; THEORETICAL MODEL;

EID: 0141763828     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.014104     Document Type: Article

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