Accurate atomistic simulation of (a/2)〈111〉 screw dislocations and other defects in bcc tantalum

Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

Volumn 81, Issue 5, 2001, Pages 1355-1385

  Yang, L H ^a   Söderlind, Per ^a   Moriarty, John A ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DISLOCATIONS (CRYSTALS); ELECTRONIC STRUCTURE; ENTHALPY; GRAIN BOUNDARIES; GREEN'S FUNCTION; SHEAR STRENGTH; SINGLE CRYSTALS; STACKING FAULTS; TANTALUM; TWINNING; YIELD STRESS;

ACTIVATION ENTHALPY;

CRYSTAL STRUCTURE;

EID: 0035353597     PISSN: 01418610     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418610108214446     Document Type: Article

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