Fluorinated materials for 157 nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5039 I, Issue , 2003, Pages 533-538

  Poss, Andrew J ^a   Nalewajek, David ^a   Nair, Haridasan K ^a  

^a HONEYWELL   (United States)

Author keywords

Fluorinated monomers

Indexed keywords

FLUORINE; LIGHT ABSORPTION; MONOMERS; NUMERICAL METHODS; PHOTORESISTS; PROBABILITY DENSITY FUNCTION; SYNTHESIS (CHEMICAL); TRANSPARENCY;

FLUORINATED NORBORNENE MONOMERS; SYNTHETIC ROUTES; TIME DEPENDENT DENSITY FUNCTIONAL THEORY;

PHOTOLITHOGRAPHY;

EID: 0141723342     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485088     Document Type: Conference Paper

References (5)

1. Hung et al., "Resist Materials for 157 nm Microlithography; An Update" in Advances in Resist Technology and Processing XVIII, Francis M. Houlihan, Editor, Proceedings of the SPIE Vol. 4345, 2001, pp 385-395
2. Hoang, V. T. et al., Macromolecules 2002, 35, 6539-6549.
3. Fringuelli et al., The Diels -Alder Reaction - Selected Practical Methods, 2002, John Wiley & Sons, New York.
4. NFSi (N-Fluorobenzenesulfonimide) is a commercial product of Honeywell International, Inc.
5. Patent pending, T. R. Demmin et al. of Honeywell International, Inc.