Reliability of low-temperature poly-Si thin film transistors with lightly doped drain structures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 7 A, 2003, Pages 4257-4260

  Furuta, Mamoru ^a   Uraoka, Yukiharu ^a   Fuyuki, Takashi ^b  

^a TMDTCL   (Japan)

^b NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Hot carrier; Lightly doped drain; Low temperature poly silicon TFT; Raman spectroscopy

Indexed keywords

ANNEALING; DOPING (ADDITIVES); ELECTRIC VARIABLES MEASUREMENT; HOT CARRIERS; LOW TEMPERATURE PROPERTIES; POLYSILICON; RAMAN SPECTROSCOPY; RESIDUAL STRESSES; TEMPERATURE;

CRYSTAL ANALYSIS; DYNAMIC STRESS; HOT CARRIER DEGRADATION; HOT ELECTRONS; LIGHTLY DOPED DRAIN;

THIN FILM TRANSISTORS;

EID: 0141718373     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.4257     Document Type: Article

References (9)

1. M. Furuta, S. Maegawa, H. Sano, T. Yoshioka, Y. Uraoka, H. Tsutsu, I. Kobayashi, T. Kawamura and Y. Miyata: Euro Display '96, 1996, p. 547.
2. Y. Uraoka, T. Hatayama, T. Fuyuki, T. Kawamura and Y. Tsuchihashi: Jpn. J. Appl. Phys. 39 (2000) L1209.
3. Y. Toyota, T. Itoga, M. Tai, T. Kuriyagawa, Y. Goto, T. Shiba and M. Ohkura: Tech. Rep. IEICE, SDM2001, 2001, p. 113.
4. Y. Uraoka, T. Hatayama, Y. Fuyuki, T. Kawamura and Y. Tsuchihashi: IEEE Trans. Electron Device 48 (2001) 2370.
5. S. Inoue and H. Ohshima: SID Tech. Dig., 1999, p. 452.
6. K. Suzuki, M. Tada, Y. Yamazi and Y. Ishizuka: AM-LCD'98, 1998, p. 5.
7. K. Mizoguchi, H. Harima, S. Nakashima and T. Hara: J. Appl. Phys. 77 (1995) 3388.
8. T. Endo, T. Ninomiya, S. Ishida and T. Nakazono: Asia Display Tec. Dig., 2001, p. 435.
9. Y. Uraoka, Y. Morita, H. Yano, T. Hatayama and T. Fuyuki: Jpn. J. Appl. Phys. 41 (2002) 5894.