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Volumn 258, Issue 3-4, 2003, Pages 302-309

Stress distribution and curvature in graded semiconductor layers

Author keywords

A1. Modeling; A1. Stresses; B1. Graded layers; B2. Semiconducting gallium arsenide

Indexed keywords

ELASTICITY; GALLIUM NITRIDE; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; STRESS CONCENTRATION;

EID: 0141707767     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01563-X     Document Type: Article
Times cited : (27)

References (28)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.