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Volumn 258, Issue 3-4, 2003, Pages 302-309
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Stress distribution and curvature in graded semiconductor layers
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Author keywords
A1. Modeling; A1. Stresses; B1. Graded layers; B2. Semiconducting gallium arsenide
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Indexed keywords
ELASTICITY;
GALLIUM NITRIDE;
MATHEMATICAL MODELS;
SEMICONDUCTING GALLIUM ARSENIDE;
STRESS CONCENTRATION;
SEMICONDUCTOR LAYERS;
SEMICONDUCTING FILMS;
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EID: 0141707767
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(03)01563-X Document Type: Article |
Times cited : (27)
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References (28)
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