Wet etching studies of silicon nitride thin films deposited by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition

Microelectronic Engineering

Volumn 70, Issue 1, 2003, Pages 109-114

  Sundaram, K B ^a   Sah, R E ^b   Baumann, H ^c   Balachandran, K ^a   Todi, R M ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c GOETHE UNIVERSITY   (Germany)

Author keywords

ECR PECVD; Silicon nitride films; Wet etching

Indexed keywords

CONCENTRATION (PROCESS); ELECTRON CYCLOTRON RESONANCE; ETCHING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; TEMPERATURE DISTRIBUTION; THIN FILMS;

PRECURSORS;

SILICON NITRIDE;

EID: 0141531090     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00412-X     Document Type: Article

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