A model of the chemical vapor deposition of Si1-x-yGe xCy films from silane, germane and methyl silane

Microelectronic Engineering

Volumn 69, Issue 2-4, 2003, Pages 633-640

  Stoker, M W ^a   Merchant, T ^a   Morton, A ^a   Hildreth, J ^a  

^a MOTOROLA INC   (United States)

Author keywords

Kinetic mechanism; Silicon germanium; Substitutional carbon

Indexed keywords

ADSORPTION; CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; DESORPTION; HIGH PRESSURE EFFECTS; REACTION KINETICS; SILICON COMPOUNDS;

DEPOSITION RATES;

SEMICONDUCTING FILMS;

EID: 0141456645     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00356-3     Document Type: Conference Paper

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