Robust HfN Metal Gate Electrode for Advanced MOS Devices Application

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 151-152

  Yu, H Y ^a   Lim, H F ^a   Chen, J H ^a   Li, M F ^a   Zhu, C X ^a   Kwong, D L ^b   Tung, C H ^c   Bera, K L ^c   Leo, C J ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; THERMODYNAMIC STABILITY; GATE DIELECTRICS; MOS DEVICES; REFRACTORY METAL COMPOUNDS; WORK FUNCTION;

GATE ELECTRODES;

MOS DEVICES; SILICA;

DEVICE APPLICATION; FULLY DEPLETED SOI; HIGH TEMPERATURE TREATMENTS; METAL ELECTRODES; METAL GATE ELECTRODES; OXYGEN DIFFUSION; SYMMETRIC DOUBLE GATE; ULTRATHIN BODY;

EID: 0141426794     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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