Arsenic precipitation in GaAs for single-electron tunneling applications

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Volumn , Issue , 1997, Pages 135-138

  Hung, C Y ^a   Harris, J S ^a   Marshall, A F ^a   Kiehl, R A ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; ARSENIC; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; PRECIPITATION (CHEMICAL); SEMICONDUCTING GALLIUM; SEMICONDUCTOR ALLOYS; TEMPERATURE;

ANNEALING TEMPERATURES; ARSENIC DIFFUSION; COMPOSITIONAL CONTROL; CONTROLLED PRECIPITATION; LOW-TEMPERATURE GROWN; POSITIONAL CONTROL; SINGLE ELECTRON TUNNELING; SMALL PARTICLES;

ELECTRON TUNNELING;

EID: 0043285671     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.1998.711598     Document Type: Conference Paper

References (7)

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5. Yin L-M, et al 1992 Mater. Res. Soc. Symp. Proc. 241 181
6. Lahiri I, et al. 1996 Appl. Phys. Lett. 69 239-241
7. Melloch M R, et al. 1996 Critical Reviews in Solid State and Mat. Sci. 21 189-263