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Electronics Letters

Volumn 39, Issue 17, 2003, Pages 1250-1252

Improved-performance, InGaAs/InGaAsP (λ = 980 nm) asymmetric broad-waveguide diode lasers via waveguide-core doping

(3) Lee, J J a Mawst, L J a Botez, D a

a UNIVERSITY OF WISCONSIN MADISON (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; HETEROJUNCTIONS; LASER MODES; LIGHT ABSORPTION; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL WAVEGUIDES; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SUBSTRATES; TEMPERATURE;

INDIUM GALLIUM ARSENIDE PHOSPHIDE; SEPARATE CONFINEMENT HETEROSTRUCTURE; WAVEGUIDE CORE;

QUANTUM WELL LASERS;

EID: 0043240716 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:20030830 Document Type: Article

Times cited : (6)

References (7)

1
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- Botez, D.¹

2
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- Buda, M.¹

3
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- Asymmetric broad waveguide diode lasers (λ = 980 nm) of large equivalent transverse spot size and low temperature sensitivity
- Lee, J.J., Mawst, L.J., and Botez, D.: 'Asymmetric broad waveguide diode lasers (λ = 980 nm) of large equivalent transverse spot size and low temperature sensitivity', IEEE Photonics Technol. Lett., 2002, 14, pp. 1046-1048
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- Lee, J.J.¹ Mawst, L.J.² Botez, D.³

4
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- MOCVD growth of asymmetric 980 nm InGaAs/InGaAsP broad-waveguide diode lasers for high power applications
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- Lee, J.J.¹ Mawst, L.J.² Botez, D.³

5
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- Belenky, G.L.¹

6
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- Optical losses of Al-free lasers for λ = 0.808 and 0.98 μm
- Yi, H., et al.: 'Optical losses of Al-free lasers for λ = 0.808 and 0.98 μm', Appl. Phys. Lett., 1996, 69, pp. 2983-2985
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7
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- Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers
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