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Volumn 14, Issue 8, 2002, Pages 1046-1048

Asymmetric broad waveguide diode lasers (λ = 980 nm) of large equivalent transverse spot size and low temperature sensitivity

(3) Lee, J J b Mawst, L J a,b Botez, D a,b

a IEEE

b Wisconsin Electric Machines and Power Electronics Consortium (United States)

Author keywords

Asymmetric transverse waveguide; Diode laser; Equivalent transverse spot size; Metal organic chemical vapor deposition; Quantum well laser

Indexed keywords

CURRENT DENSITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL WAVEGUIDES; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

ASYMMETRIC BROAD WAVEGUIDE (BW) TRANSVERSE STRUCTURES; THRESHOLD CURRENT;

QUANTUM WELL LASERS;

EID: 0036685910 PISSN: 10411135 EISSN: None Source Type: Journal
DOI: 10.1109/LPT.2002.1021964 Document Type: Article

Times cited : (19)

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