Contactless characterisation of 2D-electrons in GaN/AlGaN HFETs

Diamond and Related Materials

Volumn 6, Issue 10, 1997, Pages 1536-1538

  Alause, H ^a   Skierbiszewski, C ^a   Dyakonov, M ^a   Knap, W ^a   Sadowski, M L ^b,d   Huant, S ^b   Young, J ^c   Asif Khan, M ^c   Chen, Q ^c  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b CNRS   (France)

^c APA Inc   (United States)

^d UNIVERSITY OF WARSAW   (Poland)

Author keywords

Bidimensional electron gas; Contactless characterisation; Cyclotron resonance; GaN GaA1N heterostructures

Indexed keywords

EID: 0043229515     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(97)00052-6     Document Type: Article

References (5)

1. See, for instance, The Proceedings of the First Topical Workshop on Gallium Nitride (TWN'95), Nagoya, Japan.
2. M. Asif Khan, J.N. Kuznia, J.M. Van Hove, N. Pan, J. Carter, Appl. Phys. Lett. 60 (1992) 3027; see also, M. Asif Khan, J.N. Kuznia, J.M, Van Hove, D.T. Olson, S. Krishnankutty, R.M. Kolbas, Appl. Phys. Lett. 58 (1991) 526.
3. M. Asif Khan, J.N. Kuznia, J.M. Van Hove, N. Pan, J. Carter, Appl. Phys. Lett. 60 (1992) 3027; see also, M. Asif Khan, J.N. Kuznia, J.M, Van Hove, D.T. Olson, S. Krishnankutty, R.M. Kolbas, Appl. Phys. Lett. 58 (1991) 526.
4. W. Knap, H. Alause, J.M. Bluet, J. Camassel, J. Young, M. Asif Khan, Q. Chen, S. Huant, M. Shur, Solid State Commun. 99 (1996) 195.
5. U. Merkt, Festkörpferprobleme, Advances in Solid State Physics (1987) 27.