Lattice- vs. grain-boundary-controlled interdiffusion in Bi-Sb bilayer films

Thin Solid Films

Volumn 288, Issue 1-2, 1996, Pages 186-192

  Missana, T ^a   Afonso, C N ^a   Petford Long, A K ^b   Doole, R C ^b  

^a INSTITUTO DE ÓPTICA   (Spain)

^b UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

Annealing; Antimony; Bismuth; Diffusion

Indexed keywords

ANNEALING; ANTIMONY; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DEPOSITION; GRAIN BOUNDARIES; INTERDIFFUSION (SOLIDS); MORPHOLOGY; SEMICONDUCTING FILMS; TRANSMISSION ELECTRON MICROSCOPY;

LATTICE CONTROLLED INTERDIFFUSION;

SEMICONDUCTING BISMUTH COMPOUNDS;

EID: 0043095181     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08810-4     Document Type: Article

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