Temperature dependence of the fundamental energy gap in GaAs

Solid State Communications

Volumn 59, Issue 12, 1986, Pages 797-802

  Kim, C K ^a   Lautenschlager, P ^a   Cardona, M ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000973915     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(86)90632-0     Document Type: Article

References (35)

1. On the theory of temperature shift of the absorption curve in non-polar crystals
2. Pressure and temperature dependence of electronic energy levels in PbSe and PbTe
3. Addendum
4. Lattice dynamics of zincblende structure compounds II. Shell model
5. Debye–Waller factors of zinc-blende-structure materials – a lattice dynamical comparison
6. Faraday Rotation and Faraday Ellipticity in the Exciton Absorption Region of GaAs