Scanning tunneling microscopy studies of the Cu:Si(5 5 12) system

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 4, 2003, Pages 1332-1335

  Woodworth, P H ^a   Moore, J C ^a   Baski, A A ^a  

^a VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; ELECTRON ENERGY LEVELS; ETCHING; GROWTH (MATERIALS); LOW ENERGY ELECTRON DIFFRACTION; OXYGEN; PRESSURE; SCANNING TUNNELING MICROSCOPY; SURFACES; TEMPERATURE; ULTRAHIGH VACUUM;

HIGH INDEX SURFACE; PERIODICITY; SURFACE RECONSTRUCTION;

SEMICONDUCTING SILICON;

EID: 0043031432     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1564041     Document Type: Article

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