Pulse-height defect in the passivated ion-implanted Si detectors of the INDRA array

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 428, Issue 2, 1999, Pages 379-390

  Tabacaru G ^a,b   Borderie, B ^a   Ouatizerga, A ^a   Parlog M ^b   Rivet, M F ^a   Auger, G ^c   Bacri, Ch O ^a   Bocage, F ^a   Bougault, R ^a   Brou, R ^a   Buchet, Ph ^d   Charvet, J L ^d   Chbihi, A ^c   Colin, J ^a   Cussol, D ^a   Dayras, R ^d   Demeyer, A ^a   Dore D ^d   Durand, D ^a   Ecomard, P ^c   Frankland, J D ^a   Galichet, E ^a   Genouin Duhamel, E ^a   Gerlic, E ^a   Guinet, D ^a   Lautesse, P ^a   Laville, J L ^c   Fèvre, A Le ^c   Lefort, T ^a   Legrain, R ^d   Neindre, N Le ^a   Lopez, O ^a   Louvel, M ^a   Nalpas, L ^d   Nguyen, A D ^a   Plagnol, E ^a   Rosato, E ^e   Saint Laurent, F ^c   Salou, S ^c   Squalli, M ^a   Steckmeyer, J C ^a   Stern, M ^a   Tassan Got, L ^a   Tirel, O ^c   Vient, E ^a   Volant, C ^d   Wieleczko, J P ^c   more..

^a CENTRE DE CALCUL DE L INSTITUT NATIONAL DE PHYSIQUE NUCLEAIRE ET DE PHYSIQUE DES PARTICULES   (France)

^b HORIA HULUBEI NATIONAL INSTITUTE OF PHYSICS AND NUCLEAR ENGINEERING   (Romania)

^c DIF   (France)

^d CEA SACLAY   (France)

^e UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; HEAVY IONS; ION IMPLANTATION; IONS; SILICON WAFERS;

PULSE HEIGHT DEFECT;

PARTICLE DETECTORS;

EID: 0042951675     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)00168-0     Document Type: Article

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