Detecting electronic states at stacking faults in magnetic thin films by tunneling spectroscopy

Physical Review Letters

Volumn 85, Issue 20, 2000, Pages 4365-4368

  Vazquez De Parga A L ^a   Garcia Vidal F J ^b   Miranda, R ^a  

^a INSTITUTO NICOLÁS CABRERA   (Spain)

^b UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COPPER; ELECTROLYTIC POLISHING; ELECTRON TRANSPORT PROPERTIES; FERMI LEVEL; INTERFACES (MATERIALS); LOW ENERGY ELECTRON DIFFRACTION; MAGNETIC THIN FILMS; PHOTOELECTRON SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; STACKING FAULTS; ULTRAHIGH VACUUM;

ELECTRON BOMBARDMENT; HOT ELECTRON TRANSPORT; ULTRAHIGH VACUUM CHAMBER;

ELECTRONIC DENSITY OF STATES;

EID: 0042909329     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.4365     Document Type: Article

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