Anisotropic etching of SiO2 film and quartz plate employing anhydrous HF

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 6 B, 2003, Pages 4009-4015

  Fukasawa, Takayuki ^a   Horiike, Yasuhiro ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Anhydrous HF; Anisotropic etching; Damage; Deep etching; HF; Notch; Plasma; RIE lag

Indexed keywords

ANISOTROPY; ETCHING; PHOTORESISTS; QUARTZ; ULTRAVIOLET RADIATION;

MASS-BALANCE;

SILICA;

EID: 0042863295     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.4009     Document Type: Conference Paper

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