메뉴 건너뛰기




Volumn 5118, Issue , 2003, Pages 558-564

Electrical characterization of atomic force microscopy grown SiO2

Author keywords

Anodic oxidation; CAFM; Dielectrics; MOS; Reliability; SiO2

Indexed keywords

ANODIC OXIDATION; ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; MOS CAPACITORS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

EID: 0042829230     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.498901     Document Type: Conference Paper
Times cited : (1)

References (13)
  • 1
    • 0041451755 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors; update
    • International Technology Roadmap for Semiconductors, 2002 update Available from http://public.itrs.net/Files/2002Update/2002Update.pdf
    • (2002)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.