![]() |
Volumn 5118, Issue , 2003, Pages 558-564
|
Electrical characterization of atomic force microscopy grown SiO2
|
Author keywords
Anodic oxidation; CAFM; Dielectrics; MOS; Reliability; SiO2
|
Indexed keywords
ANODIC OXIDATION;
ATOMIC FORCE MICROSCOPY;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC PROPERTIES;
MOS CAPACITORS;
SEMICONDUCTOR GROWTH;
THERMAL EFFECTS;
GATE OXIDES;
RAMPED VOLTAGE STRESS;
THERMALLY GROWN GATE OXIDES;
WAFER PROBER;
SILICA;
|
EID: 0042829230
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.498901 Document Type: Conference Paper |
Times cited : (1)
|
References (13)
|