Rashba-effect-induced spin dephasing in n-type InAs quantum wells

Journal of Physics Condensed Matter

Volumn 15, Issue 32, 2003, Pages 5563-5576

  Weng, M Q ^a   Wu, M W ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DEGREES OF FREEDOM (MECHANICS); ELECTRIC FIELD EFFECTS; ELECTRON SCATTERING; INTERFACES (MATERIALS); MAGNETIC FIELD EFFECTS; NUMERICAL ANALYSIS; REACTION KINETICS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMAL EFFECTS;

BLOCH EQUATIONS; COULOMB SCATTERING; ELECTRON DENSITY; RASHBA EFFECT; SPIN DEPHASING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0042789037     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/15/32/316     Document Type: Article

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