X-ray spectral power measurements utilizing the diffraction pattern of a slit

Review of Scientific Instruments

Volumn 70, Issue 3, 1999, Pages 1624-1626

  Baker, K L ^a,c   Porter, J L ^a   Ruggles, L E ^a   Chrien, R E ^b   Idzorek, G C ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042728365     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1149642     Document Type: Article

References (9)

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2. G. A. Chandler et al. Rev. Sci. Instrum. 63, 4828 (1992).
3. N. M. Ceglio, R. L. Kauffman, A. M. Hawryluk, and H. Medecki, Appl. Opt. 22, 318 (1983).
4. R. Sigel et al., Phys. Rev. A 45, 3987 (1992).
5. G. A. Chandler (private communication).
6. M. L. Schattenburg, E. H. Anderson, and Henry I. Smith, Phys. Scr. 41, 13 (1990).
7. L. E. Ruggles, J. L. Porter, and R. Bartlett, Rev. Sci. Instrum. 68, 1063 (1997).
8. International Radiation Detectors Inc., 2527 W. 237th Street Unit C, Torrance, CA 90505.
9. G. C. Idzorek and R. J. Bartlett, "Silicon photodiode characterization from 1 eV to 10 keV," presented at the EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy VIII, San Diego, CA 1997, p. 349.