Silicon photodiode characterization from 1 eV to 10 keV

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3114, Issue , 1997, Pages 349-356

  Idzorek, G C ^a   Bartlett, R J ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

Silicon photodiodes; X ray detectors

Indexed keywords

CALIBRATION; PHOTOCATHODES; PHOTONS; RADIATION DETECTORS; SEMICONDUCTING SILICON; X RAYS;

X-RAY DETECTORS;

PHOTODIODES;

EID: 0031288403     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.278897     Document Type: Conference Paper

References (13)

1. Stable silicon photodiodes for absolute intensity measurements in the VUV and soft X-ray regions
2. Soft X-Ray silicon photodiodes with 100% quantum efficiency
3. Stability and quantum efficiency performance of silicon photodiode detectors in the far ultraviolet
4. Soft X-ray diagnostics for pulsed power machines
5. One gigarad passivating nitrided oxides for 100% internal quantum efficiency silicon photodiodes
6. VUV-soft X-ray beamline for spectroscopy and calibration
7. X-ray interactions: Photoabsorption, scattering, transmission, and Reflection at E=50-30,000 eV, Z=1-92
8. The X-ray energy response of silicon Part A. Theory
9. Target plasma formation for magnetic compression / magnetized target fusion
10. A five-channel, diamond photoconducting X-ray detector array for z-pinch experiments