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Volumn 6, Issue 10, 1997, Pages 1476-1479
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Investigation of walk-out phenomena in SiC mesa diodes with SiO2/Si3N4 passivation
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Author keywords
Drift; Mesa diodes; Oxide passivation; Walk out
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Indexed keywords
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EID: 0042728271
PISSN: 09259635
EISSN: None
Source Type: Journal
DOI: 10.1016/s0925-9635(97)00075-7 Document Type: Article |
Times cited : (5)
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References (7)
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