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Volumn 6, Issue 10, 1997, Pages 1476-1479

Investigation of walk-out phenomena in SiC mesa diodes with SiO2/Si3N4 passivation

Author keywords

Drift; Mesa diodes; Oxide passivation; Walk out

Indexed keywords


EID: 0042728271     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(97)00075-7     Document Type: Article
Times cited : (5)

References (7)
  • 7
    • 0018154439 scopus 로고
    • S.T. Pantelides (Ed.), Yorktown Heights, New York
    • 2 and Its Interfaces, Yorktown Heights, New York, 1978, pp. 328-332.
    • (1978) 2 and Its Interfaces , pp. 328-332
    • Svensson, C.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.