Pseudogap in Doped Mott Insulators is the Near-Neighbor Analogue of the Mott Gap

Physical Review Letters

Volumn 91, Issue 1, 2003, Pages

  Stanescu, Tudor D ^a   Phillips, Philip ^b  

^a RUTGERS UNIVERSITY   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; DOPING (ADDITIVES); ELECTRIC INSULATORS; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC DENSITY OF STATES; GREEN'S FUNCTION; PARTICLES (PARTICULATE MATTER); SPECTRUM ANALYSIS; THERMAL EFFECTS;

HOPPING INTEGRAL; LATTICE SITE; MOTT GAP; MOTT INSULATORS; PSEUDOGAP; SINGLE PARTICLE SPECTRUM; STRONG COUPLING PHYSICS;

ENERGY GAP;

EID: 0042709500     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.91.017002     Document Type: Article

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