Work function change on O-plasma treated indium-tin-oxide

Materials Science and Engineering: B

Volumn 100, Issue 3, 2003, Pages 275-279

  Kim, G Y ^a   Oh, J S ^a   Choi, E H ^a   Cho, G S ^a   Kang, S O ^a   Cho, J ^a  

^a Kwangwoon University   (South Korea)

Author keywords

Auger electron spectroscopy; Indium tin oxide; O Plasma; Work function; Focused ion beam

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ION BEAMS; OXYGEN; PLASMA APPLICATIONS; SURFACE PROPERTIES;

WORK FUNCTION;

INDIUM COMPOUNDS;

EID: 0042415773     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(03)00115-6     Document Type: Article

References (18)

1. Fan J.C.C., Bachner F.J. J. Electrochem. Soc. 12:1975;1719.
2. Hamburg I., Granqvist C.G. J. Appl. Phys. 60:1986;R123.
3. Tang C.W., VanSlyke S.A. Appl. Phys. Lett. 51:1987;913.
4. Kobayashi S., Hori H., Tanaka Y. Collings P.J., Patel J.S. Handbook of Liquid Crystal Research. 1997;415 Oxford University Press, New York. Chapter 10.
5. Tang C.W. Appl. Phys. Lett. 48:1986;183.
6. Parker I.D. J. Appl. Phys. 75:1994;1656.
7. Li F., Tang H., Shinar J., Resto O., Weisz S.Z. Appl. Phys. Lett. 70:1997;2741.
8. Furukawa K., Terasaka Y., Ueda H., Matsumura M. Synth. Met. 91:1997;99.
9. Wu C.W., Wu C.I., Strum J.C., Kahn A. Appl. Phys. Lett. 70:1997;1348.
10. Kim J.S., Friend R.H., Lacialli F. Appl. Phys. Lett. 74:1999;3084.
11. Ko S.K., Choi W.K., Cheng C.H., Leung L.M., Kwong C.F. Appl. Phys. A: Mater. Sci. Process. 68:1999;447.
12. Appleyard S.F.J., Willis M.R. Opt. Mater. 9:1998;120.
13. Hagstrum H.D. Phys. Rev. 96:1954;336.
14. Choi E.H., Lim J.Y., Kim Y.G., Ko J.J., Kim D.I., Lee C.W., Cho G.S. J. Appl. Phys. 86:1999;6525.
15. Oechsner H. Phys. Rev. B. 17:1978;1052.
16. Petrov N.N. Bull. Acad. Sci. USSR, Phys. Ser. (English Transl.). 26:1962;1350.
17. Yu H.Y., Feng X.D., Grozea D., Lu Z.H., Sodhi R.N.S., Hor A.M., Aziz H. Appl. Phys. Lett. 78:2001;2595.
18. Milliron D.J., Hill I.G., Shen C., Kahn A., Schwartz J. J. Appl. Phys. 87:2000;572.