Antireflection-coated blue GaN laser diodes in an external cavity and Doppler-free indium absorption spectroscopy

Applied Optics

Volumn 42, Issue 12, 2003, Pages 2110-2118

  Hildebrandt, Lars ^a   Knispel, Richard ^a   Stry, Sandra ^a   Sacher, Joachim R ^a   Schael, Frank ^b,c  

^a Sacher Lasertechnik GmbH   (Germany)

^b UNIVERSITY OF POTSDAM   (Germany)

^c Ehrfeld Mikrotechnik AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANTIREFLECTION COATINGS; DOPPLER EFFECT; SEMICONDUCTING GALLIUM COMPOUNDS;

LITTROW CONFIGURATION;

SEMICONDUCTOR LASERS;

EID: 0042383234     PISSN: 1559128X     EISSN: 21553165     Source Type: Journal    
DOI: 10.1364/AO.42.002110     Document Type: Article

References (32)

1. R. N. Hall, G. E. Fenner, J. D. Kingsley, T. J. Soltys, and R. O. Carlson, “Coherent light emission from GaAs Junctions,” Phys. Rev. Lett. 9, 366-368 (1962).
2. M. I. Nathan, W. P. Dumke, G. Burns, F. H. Dill, Jr., and G. J. Lasher, “Stimulated emission of radiation from GaAs p-junctions,” Appl. Phys. Lett. 1, 62 (1962).
3. T. M. Quist, R. H. Rediker, R. J. Keyes, W. E. Krag, B. Lax, A. L. Mc Whorter, and H. J. Zeigler, “Semiconductor maser of GaAs,” Appl. Phys. Lett. 1, 91-92 (1962).
4. C. E. Wieman and L. Hollberg, “Using diode lasers for atomic physics,” Rev. Sci. Instrum. 62, 1-20 (1991).
5. S. Nakamura, S. Pearton, and G. Fasol, “The blue laser diode— the complete story,” 2nd ed. (Springer, Berlin, 2000).
6. S. Nakamura, S. Pearton, and G. Fasol http://www.nichia.co.jp.
7. J. W. Crowe and R. M. Craig, Jr. “GaAs laser linewidth measurements by heterodyne detection,” Appl. Phys. Lett. 5, 72-73 (1964).
8. L. Ricci, M. Weidemuller, T. Esslinger, A. Hemmerich, C. Zimmermann, V. Vuletic, W. Koenig, and T. W. Haensch, “A compact grating-stabilized diode laser system for atomic physics,” Opt. Commun. 117, 541-549 (1995).
9. L. Ricci, M. Weidemuller, T. Esslinger, A. Hemmerich, C. Zimmermann, V. Vuletic, W. Koenig, and T. W. Haensch http://www.sacher-laser.com.
10. M. G. Littman and H. J. Metcalf, “Spectrally narrow pulsed dye laser without beam expander,” Appl. Opt. 17, 2224-2227 (1978).
11. J. Struckmeyer, A. Euteneuer, B. Smarsly, M. Breede, M. Born, M. Hofmann, L. Hildebrandt, and J. Sacher, “Electronically tunable external-cavity laser diode,” Opt. Lett. 24, 1573-1574 (1999).
12. M. Laschek, M. Reich, D. Wandt, W. Arens, C. Fallnich, and H. Welling, “External cavity diode laser with electrooptic wavelength tuning,” in Conference on Lasers and Electro-Optics, OSA Technical Digest (Optical Society of America, Washington D.C., 1999), pp. 141-142.
13. D. Wandt, C. Fallnich, and H. Welling, “Laserdioden mit externen Resonatoren fuer die Gasanalyse,” tm-Technisches Messen 68, 365-373 (2001).
14. L. Hildebrandt, R. Knispel, and J. Sacher, “Kompakte External Cavity Dioden Laser fuer die industrielle Messtechnik,” tm-Technisches Messen 68, 374-379 (2001).
15. D. J. Lonsdale, A. P. Willis, and T. A. King, “Extended tuning and single-mode operation of an anti-reflection-coated InGaN violet laser diode in a Littrow cavity,” Meas. Sci. Technol. 13, 488-493 (2002).
16. J. Sacher, “Coating process and apparatus,” U.S. patent 6,297,066 (2 October 2001).
17. I. P. Kaminow, G. Eisenstein, and L. W. Stulz, “Measurement of the modal reflectivity of an antireflection coating on a superluminescent diode,” IEEE J. Quantum Electron. QE-19, 493-495 (1983).
18. J. Sacher, D. Baums, P. Panknin, W. Elsaesser, and E. O. Goebel, “Intensity instabilities of semiconductor lasers under current modulation, external light injection, and delayed feedback,” Phys. Rev. A 45, 1893-1905 (1992).
19. W. W. Chow, S. Koch, and M. Sargent III, Semiconductor-Laser Physics (Springer, Berlin, 1994).
20. H. Leinen, D. Glaessner, H. Metcalf, R. Wynands, D. Haubrich, and D. Meschede, “GaN blue diode laser: a spec-troscopist’s view,” Appl. Phys. B 70, 567-571 (2000).
21. G. P. Agrawal, “Line narrowing in a single-mode injection laser due to external optical feedback,” IEEE J. Quantum Electron. QE-20, 468-471 (1984).
22. P. Glas, A. Klehr, and R. Mueller, “Transient and stationary properties in bistable operation of a GaAs laser coupled to an external resonator,” Opt. Commun. 44, 196-200 (1983).
23. J. Mork, B. Tromborg, and J. Mark, “Chaos in semiconductor lasers with optical feedback: theory and experiment,” IEEE J. Quantum Electron. QE-28, 93-108 (1992).
24. L. Hildebrandt and J. Sacher, “A comparison of AR-coated diode lasers and non AR-coated diode lasers, both within an identical external cavity,” http://data.sacher.de/arc/arbeneft.pdf.
25. F. Favre and D. Le Guen, “82 nm of continuous tunability for an external cavity semiconductor laser,” Electron. Lett. 27, 183-184 (1991).
26. C. H. Henry, “Theory of the linewidth of semiconductor laser,” IEEE J. Quantum Electron. QE-18, 259-264 (1982).
27. C. H. Henry, “Theory of the phase noise and power spectrum of a single mode injection laser,” IEEE J. Quantum Electron. QE-19, 1391-1397 (1983).
28. W. Demtroeder, Laser Spectroscopy, 2nd ed. (Springer, Berlin, 1998).
29. U. Tanaka and T. Yabuzaki, “Frequency stabilisation of diode laser using external cavity and Doppler-free atomic spectra,” Jpn. J. Appl. Phys. 33, 1614-1622 (1994).
30. A. M. Akulshin, V. A. Sautenkov, V. L. Velchansky, A. S. Zibrov, and M. V. Zverkov, “Power broadening of saturation absorption resonance on the D2 line of rubidium,” Opt. Commun. 77, 295-298 (1990).
31. S. Nakayama, “Theoretical analysis of Rb and Cs D2 lines in Doppler-free spectroscopic techniques with optical pumping,” Jpn. J. Appl. Phys. 24, 1-7 (1985).
32. K. B. Mac Adam, A. Steinbach, and C. Wieman, “A narrowband tunable diode laser system with grating feedback, and a saturated absorption spectrometer for Cs and Rb,” Am. J. Phys. 60, 1098-1111 (1992).