e-beam and deep-UV exposure of PMMA-based resists: Identical or different chemical behavior?

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3333, Issue , 1998, Pages 1452-1457

  Uhl, A ^a,b   Bendig, Juergen ^a   Leistner, J ^a   Jagdhold, Ulrich A ^b   Bauer, Joachim J ^b  

^a HUMBOLDT UNIVERSITY   (Germany)

^b IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISSOLUTION; KRYPTON; MOLECULAR WEIGHT DISTRIBUTION; POLYMERS; SYNTHESIS (CHEMICAL);

CHAIN-SCISSION REACTIONS; CHEMICAL BEHAVIORS; DEEP-UV; MULTI MODALS; POLYMER DEGRADATIONS;

GRAFTING (CHEMICAL);

EID: 0042376196     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.312404     Document Type: Conference Paper

References (6)

1. K. U. Pohl, F. Rodriguez, Y. M. N. Namaste, S. K. Obendorf, ACS Symp. Ser. 266 (1984) 323;
2. A. Uhl, J. Bendig, J. Leistner, U. Jagdhold, L. Bauch, M. Böttcher, J. Vac. Sci. Technol., in preparation.
3. M. Hatzakis, J. Vac. Sci. Technol. 16 (1979) 1984;
4. W. Moreau, M. Merrit, W. Moyer, M. Hatzakis, J. Vac. Sci. Technol. 16 (1979) 1989.
5. K. Jain, Excimer Laser Lithography, SPIE, Bellingham 1990, p. 139-145.
6. J. S. Greeneich and T. van Duzer, IEEE Trans. Electron Devices, ED 21(1974) 286.