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Volumn 36, Issue 1-6 SPEC., 2003, Pages 647-652

MeV energy Lithium ion irradiated crystalline GaAs: An optical study

Author keywords

Fundamental optical absorption; GaAs; Ion irradiation; Ion solid interaction

Indexed keywords

ION BEAMS; LIGHT ABSORPTION; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS;

EID: 0042363597     PISSN: 13504487     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1350-4487(03)00218-X     Document Type: Conference Paper
Times cited : (1)

References (12)
  • 7
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    • Absorption of light by atoms in solids
    • Dexter D.L. Absorption of light by atoms in solids. Phys. Rev. B. 101:1956;48.
    • (1956) Phys. Rev. B , vol.101 , pp. 48
    • Dexter, D.L.1
  • 8
    • 0022078027 scopus 로고
    • Damage accumulation in hydrogen-implanted silicon
    • and references therein
    • Hall B.O. Damage accumulation in hydrogen-implanted silicon. Nucl. Instrum. Methods B. 16:1986;177. and references therein.
    • (1986) Nucl. Instrum. Methods B , vol.16 , pp. 177
    • Hall, B.O.1
  • 12
    • 26344442097 scopus 로고
    • The long-wavelength edge of photographic sensitivity and of the electronic absorption of solids
    • Urbach F. The long-wavelength edge of photographic sensitivity and of the electronic absorption of solids. Lett. Phys. Rev. 92:1953;1324.
    • (1953) Lett. Phys. Rev. , vol.92 , pp. 1324
    • Urbach, F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.