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Volumn 168, Issue 2, 2000, Pages 229-236
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Near-infrared transmission characteristics of GaAs implanted with high energy (100 Mev) 28Si ions
e
BNN College
(India)
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
AMORPHOUS FILMS;
ANNEALING;
ETCHING;
ION IMPLANTATION;
LIGHT TRANSMISSION;
OPACITY;
PHOTONS;
RADIATION DAMAGE;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DOPING;
SINGLE CRYSTALS;
NEAR-INFRARED TRANSMISSION;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0033734919
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0168-583X(99)00890-3 Document Type: Article |
Times cited : (6)
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References (23)
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