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Volumn 168, Issue 2, 2000, Pages 229-236

Near-infrared transmission characteristics of GaAs implanted with high energy (100 Mev) 28Si ions

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS FILMS; ANNEALING; ETCHING; ION IMPLANTATION; LIGHT TRANSMISSION; OPACITY; PHOTONS; RADIATION DAMAGE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

EID: 0033734919     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00890-3     Document Type: Article
Times cited : (6)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.