Measurement of the deformation potentials for GaAs using polarized photoluminescence

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 239, Issue 4-5, 1998, Pages 277-284

  Mair, R A ^a   Prepost, R ^a   Garwin, E L ^b   Maruyama, T ^b  

^a University of Wisconsin Madison   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFORMATION; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM;

DEFORMATION POTENTIAL; EPITAXIALLY GROWN; HEAVY HOLES; LATTICE STRAIN; LIGHT HOLES; POLARIZED PHOTOLUMINESCENCE; X-RAY DIFFRACTION MEASUREMENTS; YIELD VALUE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0042357212     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0375-9601(98)00036-X     Document Type: Article

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