Anisotropies in strain and quantum efficiency of strained GaAs grown on GaAsP

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 212, Issue 4, 1996, Pages 231-236

  Mair, R A ^a   Prepost, R ^a   Tang, H ^b   Garwin, E L ^b   Maruyama, T ^b   Mulhollan, G ^b  

^a University of Wisconsin Madison   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; EFFICIENCY; FIELD EMISSION CATHODES; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MAGNETIC MOMENTS; PHOSPHORUS COMPOUNDS; SEMICONDUCTING GALLIUM; SPIN POLARIZATION; STRAIN;

ANISOTROPIC STRAIN RELAXATION; ELECTRON SPIN POLARIZATION; GAAS PHOTOCATHODES; IN-PLANE STRAINS; LINEARLY POLARIZED LIGHT; WAVELENGTH DEPENDENCE;

QUANTUM EFFICIENCY;

EID: 0000165305     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/0375-9601(96)00058-8     Document Type: Article

References (22)

1. T. Maruyama, E.L. Garwin, R. Prepost, G.H. Zapalac, J.S. Smith and J.D. Walker, Phys. Rev. Lett. 66 (1991) 2376.
2. T. Nakanishi et al., Phys. Lett. A 158 (1991) 345; T. Maruyama, E.L. Garwin, R. Prepost and G.H. Zapalac, Phys. Rev. B 46 (1992) 4261; H. Aoyagi et al., Phys. Lett. A 167 (1992) 415; T. Saka et al., Japan. J. Appl. Phys. 32 (1993) 1837; J.C. Grobli et al., Phys. Rev. Lett. 74 (1995) 2106.
3. T. Nakanishi et al., Phys. Lett. A 158 (1991) 345; T. Maruyama, E.L. Garwin, R. Prepost and G.H. Zapalac, Phys. Rev. B 46 (1992) 4261; H. Aoyagi et al., Phys. Lett. A 167 (1992) 415; T. Saka et al., Japan. J. Appl. Phys. 32 (1993) 1837; J.C. Grobli et al., Phys. Rev. Lett. 74 (1995) 2106.
4. T. Nakanishi et al., Phys. Lett. A 158 (1991) 345; T. Maruyama, E.L. Garwin, R. Prepost and G.H. Zapalac, Phys. Rev. B 46 (1992) 4261; H. Aoyagi et al., Phys. Lett. A 167 (1992) 415; T. Saka et al., Japan. J. Appl. Phys. 32 (1993) 1837; J.C. Grobli et al., Phys. Rev. Lett. 74 (1995) 2106.
5. T. Nakanishi et al., Phys. Lett. A 158 (1991) 345; T. Maruyama, E.L. Garwin, R. Prepost and G.H. Zapalac, Phys. Rev. B 46 (1992) 4261; H. Aoyagi et al., Phys. Lett. A 167 (1992) 415; T. Saka et al., Japan. J. Appl. Phys. 32 (1993) 1837; J.C. Grobli et al., Phys. Rev. Lett. 74 (1995) 2106.
6. T. Nakanishi et al., Phys. Lett. A 158 (1991) 345; T. Maruyama, E.L. Garwin, R. Prepost and G.H. Zapalac, Phys. Rev. B 46 (1992) 4261; H. Aoyagi et al., Phys. Lett. A 167 (1992) 415; T. Saka et al., Japan. J. Appl. Phys. 32 (1993) 1837; J.C. Grobli et al., Phys. Rev. Lett. 74 (1995) 2106.
7. R. Alley et al., SLAC-PUB-6489.
8. K. Abe et al., Phys. Rev. Lett. 73 (1994) 25; K. Abe et al., Phys. Rev. Lett. 74 (1995) 346.
9. K. Abe et al., Phys. Rev. Lett. 73 (1994) 25; K. Abe et al., Phys. Rev. Lett. 74 (1995) 346.
10. M.S. Abrahams et al., Appl. Phys. Lett. 21 (1972) 185; K.L. Kavanagh et al., J. Appl. Phys. 64 (1988) 4843; M. Grundmann et al., J. Vac. Sci. Technol. B 8 (1990) 751; A. Bensaada et al., J. Crystal Growth 130 (1993) 433.
11. M.S. Abrahams et al., Appl. Phys. Lett. 21 (1972) 185; K.L. Kavanagh et al., J. Appl. Phys. 64 (1988) 4843; M. Grundmann et al., J. Vac. Sci. Technol. B 8 (1990) 751; A. Bensaada et al., J. Crystal Growth 130 (1993) 433.
12. M.S. Abrahams et al., Appl. Phys. Lett. 21 (1972) 185; K.L. Kavanagh et al., J. Appl. Phys. 64 (1988) 4843; M. Grundmann et al., J. Vac. Sci. Technol. B 8 (1990) 751; A. Bensaada et al., J. Crystal Growth 130 (1993) 433.
13. M.S. Abrahams et al., Appl. Phys. Lett. 21 (1972) 185; K.L. Kavanagh et al., J. Appl. Phys. 64 (1988) 4843; M. Grundmann et al., J. Vac. Sci. Technol. B 8 (1990) 751; A. Bensaada et al., J. Crystal Growth 130 (1993) 433.
14. G. Pikus and G. Bir, Sov. Phys. Solid State 1 (1959) 1502; H. Hasegawa, Phys. Rev. 129 (1963) 1029; H. Asai and K. Oe, J. Appl. Phys. 54 (1983) 2052.
15. G. Pikus and G. Bir, Sov. Phys. Solid State 1 (1959) 1502; H. Hasegawa, Phys. Rev. 129 (1963) 1029; H. Asai and K. Oe, J. Appl. Phys. 54 (1983) 2052.
16. G. Pikus and G. Bir, Sov. Phys. Solid State 1 (1959) 1502; H. Hasegawa, Phys. Rev. 129 (1963) 1029; H. Asai and K. Oe, J. Appl. Phys. 54 (1983) 2052.
17. Spire Corporation, Bedford, MA 01730, USA.
18. P.F. Fewster, Appl. Surf. Sci. 50 (1991) 9.
19. O. Madelung, ed., Semiconductors, New series III/17a of Landolt-Börnstein (Springer, Berlin, 1982).
20. F.H. Pollak et al., Phys. Rev. Lett. 16 (1966) 942; F.H. Pollak et al., Phys. Rev. 172 (1968) 816; I. Balslev, Phys. Rev. 177 (1969) 1173.
21. F.H. Pollak et al., Phys. Rev. Lett. 16 (1966) 942; F.H. Pollak et al., Phys. Rev. 172 (1968) 816; I. Balslev, Phys. Rev. 177 (1969) 1173.
22. F.H. Pollak et al., Phys. Rev. Lett. 16 (1966) 942; F.H. Pollak et al., Phys. Rev. 172 (1968) 816; I. Balslev, Phys. Rev. 177 (1969) 1173.