Transport properties of Hg0.80Mg0.20Te grown by molecular beam epitaxy

Journal of Applied Physics

Volumn 84, Issue 11, 1998, Pages 6170-6173

  Gui, Yongsheng ^a   Li, Biao ^a   Zheng, Guozhen ^a   Guo, Shaoling ^a   Chu, Junhao ^a   Oehling, S ^b   Becker, C R ^b   Landwehr, G ^b  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042342647     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368932     Document Type: Article

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