The band gap of Hg1-x MgxTe grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 1157-1160

  Oehling, S ^a   Lunz, U ^a   Heinke, H ^a   Plahl, G ^a   Becker, C R ^a   Landwehr, G ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; COMPOSITION; CRYSTAL ORIENTATION; DESORPTION; ENERGY GAP; MAGNESIUM; MOLECULAR BEAM EPITAXY; PHASE SEPARATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SUBSTRATES; TERNARY SYSTEMS;

ATOMIC ORDERING; CLUSTERING ORDERING; MAGNESIUM CONCENTRATION; TERNARY MERCURY MAGNESIUM TELLURIDE;

EPITAXIAL GROWTH;

EID: 0030562497     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00844-6     Document Type: Article

References (18)

1. S. Oehling, U. Lunz, H. Heinke, G. Plahl, C.R. Becker and G. Landwehr, Proc. 7th Int. Conf. on Narrow Gap Semiconductors (1995).
2. N.G. Gluzman, L.D. Sabirzyanova, I.M. Tsidilkovskii, N.P. Gavaleshko and V.M. Frasunyak, Soc. Phys. Semicond. 15 (1981) 8.
3. M. Ehinger, M. Wenzel, A. Waag and G. Landwehr, J. Crystal Growth 123 (1992) 42.
4. J. Broser, H. Finkenrath, H.E. Gumlich, E. Mollvo, H. Nelkowski and G. Nimtz, in: Landolt-Börnstein, Vol. 17, Semiconductors, Eds. O. Madelung, M. Schulz and H. Weiss (Springer, Berlin) p. 10.
5. E. Finkman and Y. Nemirowski, J. Appl. Phys. 50 (1979) 4356.
6. L. Vegard, Z. Phys. 5 (1921) 17.
7. S. Perkowitz, L.S. Kim and P. Becla, Phys. Rev. B 43 (1991) 6598.
8. K. Beshah, D. Zamir, P. Becla, P.A. Wolff and R.G. Griffin, Phys. Rev. B 37 (1987) 6420.
9. L.C. Su, I.H. Ho and G.B. Stringfellow, Appl. Phys. Lett. 65 (1994) 749.
10. G.C. Hua, N. Otsuka, D.C. Grillo, J. Han, L. He and R.L. Gunshor, J. Crystal Growth 138 (1994) 367.
11. S. Einfeldt, H. Heinke, M. Behringer, C.R. Becker, E. Kurtz, D. Hommel and G. Landwehr, J. Crystal Growth 138 (1994) 471; T. Behr, S. Einfeldt, D. Hommel, C.R. Becker, G. Landwehr and H. Cerva, J. Crystal Growth 159 (1996) 1123.
12. S. Einfeldt, H. Heinke, M. Behringer, C.R. Becker, E. Kurtz, D. Hommel and G. Landwehr, J. Crystal Growth 138 (1994) 471; T. Behr, S. Einfeldt, D. Hommel, C.R. Becker, G. Landwehr and H. Cerva, J. Crystal Growth 159 (1996) 1123.
13. S.H. Wei and A. Zunger, Phys. Rev. B 49 (1994) 14337.
14. T.Y. Seong, A.G. Norman, G.R. Booker and A.G. Cullis, J. Appl. Phys. 75 (1994) 7852.
15. A. Waag, T. Litz, F. Fischer, H.J. Lugauer, H. Heinke and G. Landwehr, Int. Conf. on Semiconductor Heteroepitaxy, Montpellier, France (1995).
16. S. Tatarenko, F. Bassani, J.C. Klein, K. Saminaadayar, J. Cibert, V.H. Etgens, N. Maguea, H. Mariette and P. Gentile, J. Crystal Growth 111 (1994) 711.
17. B.A. Philips, A.G. Norman, T.Y. Seong, S. Mahajan, G.R. Booker, M. Skowronski, J.P. Harbison and V.G. Keramidas, J. Crystal Growth 140 (1994) 250.
18. R.C. Weast, Ed., Handbook of Chemistry and Physics, 67th ed. (CRC, Boca Raton, 1986) p. F-157.