Pt/PZT/Pt and Pt/Barrier stack etches for MEMS devices in a dual frequency high density plasma reactor

IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings

Volumn , Issue , 2002, Pages 177-183

  Werbaneth, P ^a   Almerico, J ^a   Jerde, L ^a   Marks, S ^a   Wachtmann, Bruce ^b  

^a Tegal Corporation   (United States)

^b ANALOG DEVICES INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CORROSION RESISTANCE; ELECTROMIGRATION; FERROELECTRIC THIN FILMS; PHOTORESISTS; PLASMA DEVICES; PLASMA ETCHING; PLATINUM; SEMICONDUCTING LEAD COMPOUNDS;

BARRIER STACK ETCHES; DUAL FREQUENCY HIGH DENSITY PLASMA REACTOR; METAL-FERROELECTRIC-METAL STACK; PHOTORESIST MASKS; YIELD LIMITING DEFECTS;

MICROELECTROMECHANICAL DEVICES;

EID: 0036072716     PISSN: 1523553X     EISSN: None     Source Type: Journal    
DOI: 10.1109/ASMC.2002.1001599     Document Type: Article

References (4)

1. Chemically assisted etching of PZT-based ferroelectric dielectrics and noble metal capacitor electrodes
2. The innovation on semiconductor devices by using the ferroelectric memory technology
3. High temperature etching of PZT/Pt/TiN structure by high density ECR plasma
4. Fabrication and characterization of piezoelectric PZT cantilever for high speed atomic force microscopy