Non-universal low-field magnetic scaling and variable-range hopping conductivity as a consequence of disorder in La1-xCa xMn1-yFeyO3

Journal of Physics and Chemistry of Solids

Volumn 64, Issue 9-10, 2003, Pages 1573-1577

  Laiho, R ^a   Lisunov, K G ^a,b   Lahderanta E ^a,c   Salminen, J ^a   Shakhov, M A ^a,d   Stamov, V S ^a,b   Petrenko, P A ^b   Zakhvalinskii, V S ^a,b  

^a UNIVERSITY OF TURKU   (Finland)

^b INSTITUTE OF APPLIED PHYSICS   (Moldova)

^c UNIVERSITY OF VAASA   (Finland)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

A. Oxides; D. Electrical conductivity; D. Magnetic properties

Indexed keywords

ELECTRIC CONDUCTIVITY; FERROMAGNETIC MATERIALS; MAGNETIC SCALES; MAGNETIC SUSCEPTIBILITY; PARAMAGNETIC MATERIALS;

HOPPING CONDUCTIVITY;

LANTHANUM COMPOUNDS;

EID: 0042236886     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3697(03)00191-4     Document Type: Conference Paper

References (28)

1. von Helmolt R., Wecker J., Holzapfel B., Schulz L., Sammer K. Phys. Rev. Lett. 71:1993;2331
2. (b) Schiffer P., Ramirez A.P., Bao W., Cheong S.-W. Phys. Rev. Lett. 75:1995;3336.
3. Ahn K.H., Wu X.W., Liu K., Chien C.L. Phys. Rev. B. 54:1996;15299.
4. Jonker G.H. Physica. 20:1954;1118.
5. Simopoulos A., Pissas M., Kallias G., Devlin E., Moutis N., Panagiotopoulos I., Niarchos D., Christides C., Sonntag R. Phys. Rev. B. 59:1999;1263.
6. Ahn K.H., Wu X.W., Liu K., Chien C.L. J. Appl. Phys. 81:1997;5505.
7. Laiho R., Lisunov K.G., Lähderanta E., Petrenko P.A., Salminen J., Stamov V.N., Zakhvalinskii V.S. J. Phys.: Condens. Matter. 12:2000;5751.
8. Itoh M., Natori I., Kubota S., Motoya K. J. Phys. Soc. Jpn. 63:1994;1486.
9. Le Guillou J.C., Zinn-Justin J. Phys. Rev. Lett. 39:1977;95.
10. Wegner F.J. Phys. Rev. B. 5:1972;4529.
11. Mira J., Rivas J., Vazques M., Garcia-Beneyetz J.M., Arcas J., Sanchez R.D., Senaris-Rodriguez M.A. Phys. Rev. B. 59:1999;123.
12. Zhao J.H., Song T., Kunkel H.P., Zhou X.Z., Roshko R.M., Williams G. J. Phys.: Condens. Matter. 12:2000;6903.
13. Hong C.S., Kim W.S., Hur N.H. Phys. Rev. B. 63:2001;092504.
14. Chechersky V., Nath A., Isaac I., Franck J.P., Ghosh K., Ju H., Greene R.L. Phys. Rev. B. 59:1999;497.
15. Hennion M., Moussa F., Biotteau G., Rodriguez-Carvajal J., Piusard L., Revcolevschi A. Phys. Rev. Lett. 81:1998;1957.
16. Shklovskii B.I., Efros A.L. Electronic Properties of Doped Semiconductors. 1984;Springer, Berlin. Ch. 5.
17. (a) Sykes M.F., Essam J.W. Phys. Rev. A. 133:1964;310
18. (b) Dunn A.G., Essam J.W., Ritchie D.S. J. Phys. C. 8:1975;4219.
19. Hennion M., Moussa F., Biotteau G., Rodriguez-Carvajal J., Piusard L., Revcolevschi A. Phys. Rev. Lett. 81:1998;1957.
20. Huhtinen H., Laiho R., Lähderanta E., Salminen J., Lisunov K.G., Zakhvalinskii V.S. J. Appl. Phys. 91:2002;7944.
21. Chechersky V., Nath A., Isaac I., Franck J.P., Ghosh K., Ju H., Greene R.L. Phys. Rev. B. 59:1999;497.
22. Millis A.J., Littlewood P.B., Shairman B.I. Phys. Rev. Lett. 74:1995;5144.
23. Snyder G.J., Hiskes R., DiCarolis S., Beasley M.R., Geballe T.H. Phys. Rev. B. 53:1996;14434.
24. Mott N.F., Davies E.A. Electron Processes in Non-Crystalline Materials. 1979;Clarendon, Oxford,
25. (b) Mott N.F. Metal-Insulator Transitions. 1990;Taylor and Francis, London.
26. Biswas A., Elizabeth S., Raychaudhuri A.K., Bhat H.L. Phys. Rev. B. 59:1999;5368.
27. Varma C.M. Phys. Rev. B. 54:1996;7328.
28. Viret M., Ranno L., Coey J.M.D. Phys. Rev. B. 55:1997;8067.