Low-resistance p-type polycrystalline GaSb grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 256, Issue 3-4, 2003, Pages 223-229

  Dong, Yingda ^a   Scott, Dennis W ^a   Wei, Yun ^a   Gossard, Arthur C ^a   Rodwell, Mark J ^a  

^a University of California   (United States)

Author keywords

A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III V materials; B3. Bipolar transistor

Indexed keywords

DOPING (ADDITIVES); ELECTRIC RESISTANCE; FERMI LEVEL; GALLIUM COMPOUNDS; GRAIN SIZE AND SHAPE; HETEROJUNCTION BIPOLAR TRANSISTORS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING INDIUM PHOSPHIDE;

FILM THICKNESS;

MOLECULAR BEAM EPITAXY;

EID: 0042170181     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01346-0     Document Type: Article

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