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Volumn 103, Issue 6, 2003, Pages 585-593
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The effect of pressure and temperature on AlGaInP and AlGaAs laser diodes
a,b a,b a a,c a,b a |
Author keywords
[No Author keywords available]
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Indexed keywords
EMISSION SPECTROSCOPY;
HYDROSTATIC PRESSURE;
PRESSURE EFFECTS;
SEMICONDUCTOR LASERS;
THERMAL EFFECTS;
THRESHOLD VOLTAGE;
BAND GAPS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
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EID: 0042154357
PISSN: 05874246
EISSN: None
Source Type: Journal
DOI: 10.12693/APhysPolA.103.585 Document Type: Conference Paper |
Times cited : (2)
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References (7)
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