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Volumn , Issue , 1992, Pages 251-254

A manufacturable high performance 0.1-μm pseudomorphic AlGaAs/InGaAs HEMT process for W-band MMICs

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM;

EID: 0042111537     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GAAS.1992.247268     Document Type: Conference Paper
Times cited : (16)

References (10)
  • 1
    • 84936895748 scopus 로고
    • 140 GHz 0.1 μm gate length pseudomorphic InAlAs/InGaAs/InP HEMT
    • Dec.
    • K.L. Tan, et al, "140 GHz 0.1 μm Gate Length Pseudomorphic InAlAs/InGaAs/InP HEMT", IEDM Tech. Digest, pp. 239-242, Dec. 1991.
    • (1991) IEDM Tech. Digest , pp. 239-242
    • Tan, K.L.1
  • 2
    • 0026152278 scopus 로고
    • A super low-noise 0.1 μm T-gate InAlAs/InGaAs/InP HEMT
    • K.H.G. Duh, et al, "A Super Low-Noise 0.1 μm T-Gate InAlAs/InGaAs/InP HEMT", IEEE Microwave and Guided Wave Letts., vol. 1, no. 5, pp. 114-116, 1991.
    • (1991) IEEE Microwave and Guided Wave Letts. , vol.1 , Issue.5 , pp. 114-116
    • Duh, K.H.G.1
  • 3
    • 0025588053 scopus 로고
    • 94 GHz 0.1 μm T-gate low noise pseudomorphic InGaAs HEMTs
    • K.L. Tan, et al, "94 GHz 0.1 μm T-Gate Low Noise Pseudomorphic InGaAs HEMTs", IEEE Electron Device Letts., vol. 11, no. 12, pp. 585-587, 1991.
    • (1991) IEEE Electron Device Letts. , vol.11 , Issue.12 , pp. 585-587
    • Tan, K.L.1
  • 4
    • 0026839169 scopus 로고
    • High performance W-band monolithic pseudomorphic InGaAs HEMT LNA's and design/Analysis methodology
    • H. Wang, et al, "High Performance W-Band Monolithic Pseudomorphic InGaAs HEMT LNA's and Design/Analysis Methodology", IEEE Trans. Microwave Theory and Tech., vol. 40, no. 3, pp. 417-428, 1992.
    • (1992) IEEE Trans. Microwave Theory and Tech. , vol.40 , Issue.3 , pp. 417-428
    • Wang, H.1
  • 5
    • 0027047017 scopus 로고
    • An ultra low noise W-band monolithic three-stage amplifier using 0.1 μm pseudomorphic InGaAs/GaAs HEMT technology
    • H. Wang, et al, "An Ultra Low Noise W-Band Monolithic Three-Stage Amplifier using 0.1 μm Pseudomorphic InGaAs/GaAs HEMT Technology", MTT Tech. Digest, pp. 803-806, 1992.
    • (1992) MTT Tech. Digest , pp. 803-806
    • Wang, H.1
  • 6
    • 58749096456 scopus 로고
    • State-of-the-art low noise performance of 94 GHz monolithic amplifiers using 0.1μm InGaAs/GaAs pseudomorphic HEMT technology
    • H. Wang, et al, "State-of-the art Low Noise Performance of 94 GHz Monolithic Amplifiers using 0.1μm InGaAs/GaAs Pseudomorphic HEMT Technology," IEDM Tech. Digest, pp. 939-942, 1992
    • (1992) IEDM Tech. Digest , pp. 939-942
    • Wang, H.1
  • 7
    • 0026817707 scopus 로고
    • A W-band, high gain, low noise amplifier using PHEMT MMIC
    • T.N. Ton, et al, "A W-band, High Gain, Low Noise Amplifier using PHEMT MMIC", IEEE Microwave and Guided Wave Letts., vol. 2, no. 2, pp. 63-64, 1992.
    • (1992) IEEE Microwave and Guided Wave Letts. , vol.2 , Issue.2 , pp. 63-64
    • Ton, T.N.1
  • 8
    • 0026388132 scopus 로고
    • A W-band monolithic downconverter
    • K.W. Chang, et al, "A W-Band Monolithic Downconverter", IEEE Trans. Microwave Theory and Tech., vol. 39, no. 12, pp. 1972-1979, 1991.
    • (1991) IEEE Trans. Microwave Theory and Tech. , vol.39 , Issue.12 , pp. 1972-1979
    • Chang, K.W.1
  • 9
    • 84989484222 scopus 로고    scopus 로고
    • Monolithic W-band VCOs using pseudomorphic AlGaAs/InGaAs/GaAs HEMTs
    • to be presented at
    • H. Wang, et al, "Monolithic W-Band VCOs using Pseudomorphic AlGaAs/InGaAs/GaAs HEMTs", to be presented at 1992 GaAs IC Symp.
    • 1992 GaAs IC Symp.
    • Wang, H.1
  • 10
    • 33747448999 scopus 로고    scopus 로고
    • A 0.1W W-band pseudomorphic HEMT MMIC power amplifier
    • to be presented at
    • T.H. Chen, et al, "A 0.1W W-Band Pseudomorphic HEMT MMIC Power Amplifier", to be presented at 1992 GaAs IC Symp.
    • 1992 GaAs IC Symp.
    • Chen, T.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.