Resistivity Anisotropy and Hall Coefficient of Pb-Doped Bi212 Single Crystals

Journal of Low Temperature Physics

Volumn 117, Issue 5-6, 1999, Pages 1217-1221

  Yamada, T ^a   Motohashi, M ^a   Kobayashi, H ^a   Fujita, T ^a   Shimoyama, J ^a   Kishio, K ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BISMUTH COMPOUNDS; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY MEASUREMENT; HALL EFFECT; HIGH TEMPERATURE SUPERCONDUCTORS; LEAD; OXYGEN; SINGLE CRYSTALS;

HALL COEFFICIENT MEASUREMENTS; RESISTIVITY ANISOTROPY;

OXIDE SUPERCONDUCTORS;

EID: 0042043398     PISSN: 00222291     EISSN: None     Source Type: Journal    
DOI: 10.1023/a:1022527818911     Document Type: Article

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