29Si and 30Si single crystal growth by mini-Czochralski technique

Crystal Research and Technology

Volumn 38, Issue 7-8, 2003, Pages 654-658

  Abrosimov, N V ^a   Riemann, H ^a   Schroder W ^a   Pohl, H J ^b   Kaliteevski, A K ^c   Godisov, O N ^c   Korolyov, V A ^d   Zhilnikov, A Ju ^d  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^b VITCON Projectconsult GmbH   (Germany)

^c WTZ Centrotech ECP   (Russian Federation)

^d KHLOPIN RADIUM INSTITUTE   (Russian Federation)

Author keywords

Czochralski method; Isotopic enrichment; Isotopic silicon; Semiconducting silicon

Indexed keywords

CRYSTALLIZATION; SEMICONDUCTING SILICON; SILICON WAFERS; SINGLE CRYSTALS;

ISOTROPIC ENRICHMENT;

CRYSTAL GROWTH FROM MELT;

EID: 0041970902     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.200310079     Document Type: Article

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