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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 6 B, 2003, Pages 3942-3945

Fabrication of CoSi2-buried-metal-layer Si substrates for infrared reflection absorption spectroscopy by wafer-bonding

(7) Yamamura, Shusaku a Yamauchi, Shouichi b Watanabe, Satoru c Tabe, Michiharu d Kasai, Toshio e Nonogaki, Youichi a Urisu, Tsuneo a

a GRADUATE UNIVERSITY FOR ADVANCED STUDIES (Japan)

b Denso Crporation Research Laboratories (Japan)

c FUJITSU LABORATORIES LTD (Japan)

d SHIZUOKA UNIVERSITY (Japan)

e SAITAMA UNIVERSITY (Japan)

Author keywords

BML; IRRAS; OTS; SAM; Silicon; Wafer bonding

Indexed keywords

ABSORPTION SPECTROSCOPY; BONDING; COBALT COMPOUNDS; INFRARED RADIATION; ION IMPLANTATION; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON ON INSULATOR TECHNOLOGY;

WAFER BONDING;

SILICON WAFERS;

EID: 0041861375 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.3942 Document Type: Conference Paper

Times cited : (3)

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