Global model generation for a capacitive silicon accelerometer by finite-element analysis

Sensors and Actuators, A: Physical

Volumn 67, Issue 1-3, 1998, Pages 153-158

  Ansel, Y ^a   Romanowicz, B ^a   Renaud, P ^a   Schropfer G ^b  

^a EPFL   (Switzerland)

^b Lab Phys Metrologie Oscillateurs   (France)

Author keywords

Accelerometers; Capacitive transducers; FEM simulation; Hardware description language

Indexed keywords

CAPACITANCE; FINITE ELEMENT METHOD; SILICON SENSORS;

CAPACITIVE TRANSDUCERS;

ACCELEROMETERS;

EID: 0041783300     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(98)00011-9     Document Type: Article

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