메뉴 건너뛰기




Volumn 28, Issue 10, 1997, Pages 825-828

In Situ Raman monitoring of the molecular beam epitaxial growth of gallium nitride

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITROGEN PLASMA; RAMAN SPECTROSCOPY; SIGNAL TO NOISE RATIO; SILICON COMPOUNDS;

EID: 0041769736     PISSN: 03770486     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1097-4555(199710)28:10<825::AID-JRS174>3.0.CO;2-P     Document Type: Article
Times cited : (4)

References (13)
  • 8
    • 0000589965 scopus 로고
    • Springer Tracts in Modern Physics, edited by G. Höhler, Springer, Berlin
    • W. Richter, in Resonant Raman Scattering in Semiconductors, Springer Tracts in Modern Physics, Vol. 78, edited by G. Höhler, p. 121. Springer, Berlin (1976).
    • (1976) Resonant Raman Scattering in Semiconductors , vol.78 , pp. 121
    • Richter, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.