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Volumn 28, Issue 10, 1997, Pages 825-828
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In Situ Raman monitoring of the molecular beam epitaxial growth of gallium nitride
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Author keywords
[No Author keywords available]
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Indexed keywords
ENERGY GAP;
GALLIUM ARSENIDE;
III-V SEMICONDUCTORS;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
NITROGEN PLASMA;
RAMAN SPECTROSCOPY;
SIGNAL TO NOISE RATIO;
SILICON COMPOUNDS;
ATOMIC NITROGEN;
GROWTH OF GAN;
GROWTH PROCESS;
MOLECULAR BEAM EPITAXIAL GROWTH;
MOLECULAR-BEAM EPITAXY;
PHOTON ENERGY;
RAMAN MONITORING;
RF PLASMA SOURCE;
SITU RAMAN;
SPECTRA'S;
GALLIUM NITRIDE;
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EID: 0041769736
PISSN: 03770486
EISSN: None
Source Type: Journal
DOI: 10.1002/(SICI)1097-4555(199710)28:10<825::AID-JRS174>3.0.CO;2-P Document Type: Article |
Times cited : (4)
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References (13)
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