Determination of interface composition in III-V heterojunction devices (HBT and RTD) with atomic resolution using STEM techniques

Materials Science and Engineering B

Volumn 44, Issue 1-3, 1997, Pages 52-56

  Lakner, H ^a   Mendorf, C ^a   Bollig, B ^a   Prost, W ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

Heterojunction bipolar transistors; Resonant tunneling diodes; Scanning transmission electron microscopy

Indexed keywords

BAND STRUCTURE; BIPOLAR TRANSISTORS; ELECTRON ENERGY LOSS SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DIODES; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS;

RESONANT TUNNELING DIODES; SCANNING TRANSMISSION ELECTRON MICROSCOPY;

HETEROJUNCTIONS;

EID: 0041763295     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01800-4     Document Type: Article

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