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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 8, 1998, Pages 4258-4263

Defect properties of CuInSe2 single crystals prepared by selenization horizontal bridgman method

(2) Matsushita, Hiroaki a,b Takizawa, Takeo a

a NIHON UNIVERSITY (Japan)

b TOKAI UNIVERSITY (Japan)

Author keywords

Acceptor level; Chalcopyrite; CuInSe2 single crystal; Donor level; Hall effect; Intrinsic defect; Optical band gap; PL

Indexed keywords

ANNEALING; BAND STRUCTURE; ENERGY GAP; HALL EFFECT; PHOTOLUMINESCENCE; SINGLE CRYSTALS;

SELENIZATION HORIZONTAL BRIDGMAN METHOD;

SEMICONDUCTOR MATERIALS;

EID: 0032131385 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.4258 Document Type: Article

Times cited : (9)

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