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Volumn 420, Issue , 1996, Pages 233-238
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Analysis of the conduction properties of a-Si:H n+-i-n+ structures via accurate computer modelling
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
AMORPHOUS SILICON;
CHARGE CARRIERS;
COMPUTER SIMULATION;
CURRENT DENSITY;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC CONDUCTIVITY;
ELECTRIC RESISTANCE;
ELECTRIC SPACE CHARGE;
ELECTRONIC DENSITY OF STATES;
FERMI LEVEL;
SEMICONDUCTOR DEVICE MODELS;
HIGH DANGLING BOND DENSITY;
LOW BIAS OHMIC REGION;
SPACE CHARGE LIMITED CURRENT;
SEMICONDUCTOR DEVICE STRUCTURES;
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EID: 0030395395
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-420-233 Document Type: Conference Paper |
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Times cited : (6)
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References (4)
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