GaAs radiation imaging detectors with an active layer thickness up to 1 mm

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 509, Issue 1-3, 2003, Pages 34-39

  Tyazhev, A V ^a   Budnitsky, D L ^a   Koretskay, O B ^a   Novikov, V A ^a   Okaevich, L S ^a   Potapov, A I ^a   Tolbanov, O P ^a   Vorobiev, A P ^a  

^a TOMSK STATE UNIVERSITY   (Russian Federation)

Author keywords

Charge collection efficiency; Electric field distribution; Franz Keldysh effect; GaAs

Indexed keywords

ELECTRIC FIELDS; GAMMA RAYS; SEMICONDUCTING GALLIUM ARSENIDE; THYRISTORS;

RADIATION IMAGING;

RADIATION DETECTORS;

EID: 0041728671     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(03)01545-6     Document Type: Conference Paper

References (3)

1. G.I. Ayzenshtat, et al., Proceedings of the Third International Workshop on Radiation Imaging Detectors, Orosei, Sardinia, Italy, September 23-27, 2001, pp. 96-101.
2. Berwick, et al., Proceedings of the Semiconductors for room-temperature radiation detector applications, MRS Symposium Proceedings, Vol. 302, San Francisco, CA, USA, April 1993, pp. 12-16.
3. Cola A.et al. Nucl. Instr. and Meth. Phys. A. 395:1997;98.