Microscopic modelling of semi-insulating GaAs detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 395, Issue 1, 1997, Pages 98-100

  Cola, A ^a   Vasanelli, L ^a,b   Reggiani, L ^b   Cavallini, A ^c   Nava, F ^d  

^a CNR   (Italy)

^b INFM   (Italy)

^c UNIVERSITY OF BOLOGNA   (Italy)

^d UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION IN SOLIDS; ELECTRIC FIELD EFFECTS; HOT CARRIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

DRIFT DIFFUSION MODEL; POOLE FRENKEL EFFECTS; TRAPPING/DETRAPPING KINETICS;

RADIATION DETECTORS;

EID: 0031209122     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)00621-9     Document Type: Article

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